Ion irradiation-induced localized stress relaxation in W thin film revealed by cross-sectional X-ray nanodiffraction

K. Hlushko, A. Mackova, J. Zalesak, M. Burghammer, A. Davydok, C. Krywka, R. Daniel, J. Keckes, J. Todt

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The influence of ion irradiation on residual stress and microstructure of thin films is not fully understood. Here, 5 MeV Si2+ ions were used to irradiate a 7 µm thick tungsten film prepared by magnetron sputtering. Cross-sectional X-ray nanodiffraction and electron microscopy analyses revealed a depth-localized relaxation of in-plane compressive residual stresses from to GPa after the irradiation, which is correlated with the calculated displacements per atom within a ~2 µm thick film region. The relaxation can be explained by the irradiation-induced removal of point defects from the crystal lattice, resulting in a reduction of strains of the 3rd order, manifested by a decrease of X-ray diffraction peak broadening, an increase of peak intensities and a decrease of lattice parameter. The results indicate that ion irradiation enables control over the residual stress state at distinct depths in the material.
Original languageEnglish
Article number138571
Number of pages6
JournalThin solid films
Issue number31 March
Publication statusPublished - 7 Feb 2021

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