Translated title of the contribution | Highly-ordered SiGe-islands grown by dislocation patterning using ion-assisted MBE |
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Original language | English |
Pages (from-to) | 2774-2777 |
Journal | Surface Science |
Volume | 601 |
DOIs | |
Publication status | Published - 2007 |
Highly-ordered SiGe-islands grown by dislocation patterning using ion-assisted MBE
J. Werner, M. Oehme, K. Lyutovich, Erich Kasper, Christian Hofer, Christian Teichert
Research output: Contribution to journal › Article › Research › peer-review
7
Citations
(Scopus)