HfO2 as gate dielectrics for Ge-based devices

S. Spiga; C. Wiemer; G. Scarel; G. Tallarida; G. Seguini; M. Perego; S. Ferrari; M. Fanciulli; G. Mavrou; A. Dimoulas; Sascha Kremmer; Christian Teichert; G. Pavia

HfO2 as gate dielectrics for Ge-based devices

S. Spiga, C. Wiemer, G. Scarel, G. Tallarida, G. Seguini, M. Perego, S. Ferrari, M. Fanciulli, G. Mavrou, A. Dimoulas, Sascha Kremmer, Christian Teichert, G. Pavia

Chair of Physics (460)

Research output: Book/Report › Commissioned report › Transfer › peer-review

Translated title of the contribution	HfO2 as gate dielectrics for Ge-based devices
Original language	English
Publisher	Unknown Publisher
Publication status	Published - 2007

Access to Document

http://www./mdm.infm.it

Cite this

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title = "HfO2 as gate dielectrics for Ge-based devices",

author = "S. Spiga and C. Wiemer and G. Scarel and G. Tallarida and G. Seguini and M. Perego and S. Ferrari and M. Fanciulli and G. Mavrou and A. Dimoulas and Sascha Kremmer and Christian Teichert and G. Pavia",

year = "2007",

language = "English",

publisher = "Unknown Publisher",

}

TY - BOOK

T1 - HfO2 as gate dielectrics for Ge-based devices

AU - Spiga, S.

AU - Wiemer, C.

AU - Scarel, G.

AU - Tallarida, G.

AU - Seguini, G.

AU - Perego, M.

AU - Ferrari, S.

AU - Fanciulli, M.

AU - Mavrou, G.

AU - Dimoulas, A.

AU - Kremmer, Sascha

AU - Teichert, Christian

AU - Pavia, G.

PY - 2007

Y1 - 2007

M3 - Commissioned report

BT - HfO2 as gate dielectrics for Ge-based devices

PB - Unknown Publisher

ER -