| Translated title of the contribution | ENERGY-LEVELS OF INTERSTITIAL MANGANESE IN SILICON |
|---|---|
| Original language | English |
| Pages (from-to) | 223-226 |
| Journal | Solid state communications |
| Volume | 47 |
| Publication status | Published - 1983 |
ENERGY-LEVELS OF INTERSTITIAL MANGANESE IN SILICON
Rainer Czaputa, Helmut Feichtinger, Josef Oswald
Research output: Contribution to journal › Article › Research › peer-review
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