Characterization of Surface and Structure of In Situ Doped Sol-Gel-Derived Silicon Carbide

Olivia Kettner, Sanja Šimić, Birgit Kunert, Robert Schennach, Roland Resel, Thomas Grießer, Bettina Friedel

Research output: Contribution to journalArticleResearchpeer-review

3 Citations (Scopus)
Original languageEnglish
Article number1701067
JournalAdvanced Engineering Materials
Volume20
Issue number6
DOIs
Publication statusPublished - 1 Jun 2018

Keywords

  • Self-passivation
  • silicon carbide
  • sol-gel processing
  • surface termination

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