Aluminium oxide for an effective gate in Si/SiGe two-dimensional electron gas systems

Y.S. Shin, Roland Brunner, [No Value] et.al.

Research output: Contribution to journal › Article › Research › peer-review

Translated title of the contribution	Aluminium oxide for an effective gate in Si/SiGe two-dimensional electron gas systems
Original language	English
Pages (from-to)	05504-05507
Journal	Semiconductor science and technology
Volume	26
Publication status	Published - 2011

Cite this

@article{53291959832e427aabf839ef9cd4648e,

title = "Aluminium oxide for an effective gate in Si/SiGe two-dimensional electron gas systems",

author = "Y.S. Shin and Roland Brunner and et.al., {[No Value]}",

year = "2011",

language = "English",

volume = "26",

pages = "05504--05507",

journal = "Semiconductor science and technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

}