Highly-ordered SiGe-islands grown by dislocation patterning using ion-assisted MBE

Titel in Übersetzung: Highly-ordered SiGe-islands grown by dislocation patterning using ion-assisted MBE

J. Werner, M. Oehme, K. Lyutovich, Erich Kasper, Christian Hofer, Christian Teichert

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Begutachtung

7 Zitate (Scopus)

Titel in Übersetzung	Highly-ordered SiGe-islands grown by dislocation patterning using ion-assisted MBE
Originalsprache	Englisch
Seiten (von - bis)	2774-2777
Fachzeitschrift	Surface Science
Jahrgang	601
DOIs	https://doi.org/10.1016/j.susc.2006.12.084
Publikationsstatus	Veröffentlicht - 2007

Zugriff auf Dokument

@article{097e0deef3954e8daf8afeebae14bc09,

title = "Highly-ordered SiGe-islands grown by dislocation patterning using ion-assisted MBE",

author = "J. Werner and M. Oehme and K. Lyutovich and Erich Kasper and Christian Hofer and Christian Teichert",

year = "2007",

doi = "10.1016/j.susc.2006.12.084",

language = "English",

volume = "601",

pages = "2774--2777",

journal = "Surface Science",

issn = "0043-2539",

publisher = "Elsevier",

}

TY - JOUR

T1 - Highly-ordered SiGe-islands grown by dislocation patterning using ion-assisted MBE

AU - Werner, J.

AU - Oehme, M.

AU - Lyutovich, K.

AU - Kasper, Erich

AU - Hofer, Christian

AU - Teichert, Christian

PY - 2007

Y1 - 2007

U2 - 10.1016/j.susc.2006.12.084

DO - 10.1016/j.susc.2006.12.084

M3 - Article

SN - 0043-2539

VL - 601

SP - 2774

EP - 2777

JO - Surface Science

JF - Surface Science

ER -