All-Electron Exact Exchange Treatment of Semiconductors: Effect of Core-Valence Interaction on Band-Gap and d-Band Position

Titel in Übersetzung: All-Electron Exact Exchange Treatment of Semiconductors: Effect of Core-Valence Interaction on Band-Gap and d-Band Position

S. Sharma, J.K. Dehwurst, Claudia Draxl

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Begutachtung

70 Zitate (Scopus)

Titel in Übersetzung	All-Electron Exact Exchange Treatment of Semiconductors: Effect of Core-Valence Interaction on Band-Gap and d-Band Position
Originalsprache	Englisch
Seiten (von - bis)	136402-136402
Fachzeitschrift	Physical review letters
Jahrgang	95
DOIs	https://doi.org/10.1103/PhysRevLett.95.136402
Publikationsstatus	Veröffentlicht - 2005

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title = "All-Electron Exact Exchange Treatment of Semiconductors: Effect of Core-Valence Interaction on Band-Gap and d-Band Position",

author = "S. Sharma and J.K. Dehwurst and Claudia Draxl",

year = "2005",

doi = "10.1103/PhysRevLett.95.136402",

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journal = "Physical review letters",

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AU - Sharma, S.

AU - Dehwurst, J.K.

AU - Draxl, Claudia

PY - 2005

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DO - 10.1103/PhysRevLett.95.136402

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